Skip to content
Skip to page content
soylai.com

Current Electricity — Notes

6 sections 5 min readBeta

1. Current, drift velocity and mobility

Current I=dq/dtI = dq/dt (ampere, A = C s−1^{-1}); conventional direction = direction of positive-charge flow. In metals, electrons move opposite to it.

Drift velocity. Free electrons move randomly (no net velocity without a field). In a field each gains −eE⃗/m-e\vec E/m between collisions; averaged over the relaxation time τ\tau: v⃗d=−eE⃗mτ\vec v_d = -\dfrac{e\vec E}{m}\tau

Current–drift relation. In time Δt\Delta t the electrons in a length vdΔtv_d\Delta t cross area AA: Δq=neAvdΔt\Delta q = n e A v_d\Delta t, so I=neAvd,j=IA=nevdI = n e A v_d,\qquad j = \dfrac{I}{A} = n e v_d

Mobility μ=vdE=eτm\mu = \dfrac{v_d}{E} = \dfrac{e\tau}{m} (m² V−1^{-1} s−1^{-1}).

Typical drift speed: about 10−410^{-4} m s−1^{-1}; the field (and so the signal) travels at nearly the speed of light, which is why a lamp lights at once.

Formulas

  • Current and drift
    I=neAvdI = n e A v_d
  • Drift and mobility
    vd=eEτm,μ=eτmv_d = \dfrac{eE\tau}{m},\qquad \mu = \dfrac{e\tau}{m}

Key terms

Drift velocity

Average velocity of free electrons in a conductor in an electric field.

Relaxation time

Average time between successive collisions of a free electron.

Mobility

Drift speed per unit electric field.

2. Ohm’s law, resistivity and conductivity

Substituting vd=eEτ/mv_d = eE\tau/m and E=V/lE = V/l into I=neAvdI = n e A v_d: V=IR,R=ρlA,ρ=mne2τ,σ=1ρ,j⃗=σE⃗V = IR,\qquad R = \rho\dfrac{l}{A},\qquad \rho = \dfrac{m}{n e^2\tau},\qquad \sigma = \dfrac{1}{\rho},\qquad \vec j = \sigma\vec E

  • RR (ohm) depends on the sample; ρ\rho (Ω m) only on the material and temperature.
  • Stretching a wire kk times (constant volume): R→k2RR \to k^2R.

V–I characteristics. Linear (ohmic): straight line through the origin, same for both directions. Non-linear: filament lamp (R rises as it heats), diode (depends on the sign of V), GaAs (more than one V for some I).

Temperature dependence.

  • Metals: ρT=ρ0[1+α(T−T0)]\rho_T = \rho_0[1 + \alpha(T - T_0)], α>0\alpha > 0 — hotter ions, more collisions, smaller τ\tau.
  • Alloys (nichrome, manganin, constantan): very small α\alpha — standard resistors and heater elements.
  • Semiconductors: ρ\rho falls with temperature (α<0\alpha < 0) because nn rises steeply.
  • ohmic resistor (R = 5 Ω): straight line through the origin
  • filament lamp: curve bends over as it heats
Ohmic: constant slope 1/R. Non-ohmic: slope changes with V.
  • copper (metal): rises nearly linearly
  • nichrome (alloy): almost constant
  • semiconductor: falls steeply
Shapes only; the semiconductor curve is scaled to fit.

Formulas

  • Resistance and resistivity
    R=ρ lA,ρ=mne2τR = \rho\,\dfrac{l}{A},\qquad \rho = \dfrac{m}{n e^2\tau}
  • Temperature dependence
    ρT=ρ0[1+α(T−T0)]\rho_T = \rho_0[1 + \alpha(T - T_0)]

Key terms

Resistivity

Resistance of a sample of unit length and unit cross-section; a property of the material.

Ohmic conductor

A conductor whose current is proportional to the applied voltage at constant temperature.

Temperature coefficient of resistivity

Fractional change in resistivity per degree rise in temperature, α.

3. Electrical energy and power

Charge qq moving through potential difference VV transfers energy qVqV. Power delivered to a resistor: P=VI=I2R=V2RP = VI = I^2R = \dfrac{V^2}{R}

  • Series (same II): the larger RR dissipates more (I2RI^2R).
  • Parallel (same VV): the smaller RR dissipates more (V2/RV^2/R).
  • Rated values give R=Vrated2/PratedR = V_\text{rated}^2/P_\text{rated}; then use the actual voltage.
  • Energy W=PtW = Pt; 1 kWh =3.6×106= 3.6 \times 10^{6} J.
  • Power is sent over long distances at high voltage so that the current, and the I2RI^2R loss in the lines, is small.

Formulas

  • Power
    P=VI=I2R=V2RP = VI = I^2R = \dfrac{V^2}{R}

Key terms

Kilowatt hour

Energy used by a 1 kW appliance in one hour, 3.6×1063.6 \times 10^{6} J.

4. Cells: emf, internal resistance and combinations

EMF EE: terminal p.d. of a cell when it supplies no current. Internal resistance rr: resistance of the electrolyte and electrodes.

  • Discharging: V=E−IrV = E - Ir, I=ER+rI = \dfrac{E}{R + r}. Charging: V=E+IrV = E + Ir.
  • Short circuit: I=E/rI = E/r. Open circuit: V=EV = E.
  • VV–II graph: straight line, intercept EE, slope −r-r.

Combinations

  • Series: Eeq=∑EiE_\text{eq} = \sum E_i (a reversed cell subtracts), req=∑rir_\text{eq} = \sum r_i.
  • Parallel: Eeqreq=∑Eiri\dfrac{E_\text{eq}}{r_\text{eq}} = \sum \dfrac{E_i}{r_i}, 1req=∑1ri\dfrac{1}{r_\text{eq}} = \sum \dfrac{1}{r_i}. For nn identical cells: EE, r/nr/n.
  • V = E − Ir (E = 12 V, r = 0.5 Ω)
Intercept on the V-axis = E; slope = −r.

Formulas

  • Terminal voltage
    V=E−Ir,I=ER+rV = E - Ir,\qquad I = \dfrac{E}{R + r}
  • Cells in parallel
    Eeqreq=E1r1+E2r2\dfrac{E_\text{eq}}{r_\text{eq}} = \dfrac{E_1}{r_1} + \dfrac{E_2}{r_2}

Key terms

EMF

Work done by the source per unit charge in taking charge round the circuit; equals the terminal p.d. on open circuit.

Internal resistance

Resistance offered by the cell itself to the current through it.

5. Kirchhoff’s rules

Junction rule (charge conservation): ∑Iin=∑Iout\sum I_\text{in} = \sum I_\text{out} at every junction.

Loop rule (energy conservation): ∑ΔV=0\sum \Delta V = 0 round any closed loop.

Method: (1) mark a current in every branch with an assumed direction; (2) apply the junction rule to reduce unknowns; (3) choose independent loops and add potential changes with the sign rules (resistor along I: −IR-IR; cell − to +: +E+E); (4) solve; a negative current flows opposite to the arrow.

Worked result (deck example): 12 V/2 Ω and 6 V/2 Ω branches with 4 Ω across them give 2.4 A, −0.6 A (the 6 V cell is charged) and 1.8 A.

Currents solved with Kirchhoff’s rules; arrows drawn in the solved directions.

Formulas

  • Kirchhoff’s rules
    ∑I=0,∑ΔV=0\sum I = 0,\qquad \sum \Delta V = 0

Key terms

Junction rule

The algebraic sum of currents at a junction is zero.

Loop rule

The algebraic sum of potential changes round a closed loop is zero.

6. Wheatstone bridge and metre bridge

Arms P (A–B), Q (B–C), R (A–D), S (D–C); cell across A–C, galvanometer across B–D.

Balance (Ig=0I_g = 0): B and D at the same potential. Loop ABDA: I1P=I2RI_1P = I_2R; loop BCDB: I1Q=I2SI_1Q = I_2S. Dividing: PQ=RS\dfrac{P}{Q} = \dfrac{R}{S} Balance is independent of the emf and of the galvanometer’s resistance; the cell and galvanometer may be interchanged.

Metre bridge: two arms are lengths ll and 100−l100 - l (cm) of a uniform wire: XR=l100−l\dfrac{X}{R} = \dfrac{l}{100 - l} (X in the left gap). Best accuracy with balance near the middle; end errors are reduced by interchanging X and R and averaging.

Formulas

  • Wheatstone balance
    PQ=RS\dfrac{P}{Q} = \dfrac{R}{S}
  • Metre bridge
    X=R l100−lX = R\,\dfrac{l}{100 - l}

Key terms

Balanced bridge

A Wheatstone bridge in which the galvanometer current is zero.

Exam tips

  • Derivations to practise: I=neAvdI = n e A v_d; ρ=m/ne2τ\rho = m/n e^2\tau from drift; Wheatstone balance from Kirchhoff's rules.
  • Units: mm² =10−6= 10^{-6} m²; drift speeds are tiny, signal speeds are not.
  • Loop rule signs: decide them once, write them on the diagram.
  • In bridge questions, balance means no galvanometer current, so it can be removed from the circuit.